Abstract
In Power electronic systems, Power Semiconductor devices play a central role. In the recent advancement, the special features like efficiency, cost and size power electronic systems have been improved. Still, many challenges are ahead with reference to the construction of power semiconductor devices. For further innovation in this direction, multi-disciplinary efforts are needed in terms of improvement of switches, power integration, improvement of reliability, etc. Silicon material is well established for the manufacturing of electronic devices but certain other materials like SiC and GaN have filled the gap for limitation of operation of Si. This could affect the temperature and power management issues of Si in positive manner. Silicon devices would also be accommodated in the high power electronics with in the near future. There is a necessity to study and research the important feature of some of the most important switching devices like Thyristors, Power MOSFETs and IGBTs etc. Diodes are another category of useful components in Power electronic applications that need to be studied in depth. These are manufactured in wide reverse voltage and forward current ranges. This approach may provide a direction towards the development of power electronic devices with exceptional performance, better efficiency and capability. So, the important factors of Si, SiC and GaN have been analyzed in order to enhance construction to get optimal results.