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Journal:Journal of Applied & Emerging Sciences, 2016, Volume 6, Issue No 2

Author(s): H.M.Noor Asghar, Zaheer Abbas Gilani, Irshad Ahmad, Shuang Shi, Yi Tan

Keyword(s): Semiconducting Silicon Carbide materials, I-V characteristics, Deep level transient spectroscopy (DLTS) of the material, Schottky diode